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CEB14N5 Dataheets PDF



Part Number CEB14N5
Manufacturers CET
Logo CET
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet CEB14N5 DatasheetCEB14N5 Datasheet (PDF)

CEP14N5/CEB14N5 CEF14N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP14N5 CEB14N5 CEF14N5 VDSS 500V 500V 500V RDS(ON) 0.38Ω 0.38Ω 0.38Ω ID 14A 14A 14A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted.

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CEP14N5/CEB14N5 CEF14N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP14N5 CEB14N5 CEF14N5 VDSS 500V 500V 500V RDS(ON) 0.38Ω 0.38Ω 0.38Ω ID 14A 14A 14A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 500 ±30 14 8.6 56 178 1.4 14 d 8.6 d 56 d 62 0.5 Single Pulsed Avalanche Energy e EAS 504 Single Pulsed Avalanche Current e IAS 12 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.7 62.5 2 65 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2011.Dec. http://www.cetsemi.com CEP14N5/CEB14N5 CEF14N5 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS =500V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 7A Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 250V, ID =14A, VGS = 10V, RGEN = 25Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 400V,ID = 14A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b ISf VSDg Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) =8A . g.Full package VSD test condition IS =8A . e.L = 7mH, IAS =12A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C VGS = 0V, IS = 14A Min 500 2 Typ 0.32 2100 220 7 42 62 130 25 50 11 19 Max Units 1 100 -100 V µA nA nA 4V 0.38 Ω pF pF pF 84 ns 124 ns 260 ns 50 ns 66 nC nC nC 14 A 1.4 V 2 ID, Drain Current.


CEP14N5 CEB14N5 CEF14N5


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