Document
CEP14N5/CEB14N5
CEF14N5
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP14N5 CEB14N5 CEF14N5
VDSS 500V 500V
500V
RDS(ON) 0.38Ω 0.38Ω
0.38Ω
ID 14A 14A 14A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
VDS VGS ID
IDM e
PD
500
±30
14 8.6 56 178 1.4
14 d 8.6 d 56 d 62 0.5
Single Pulsed Avalanche Energy e
EAS 504
Single Pulsed Avalanche Current e
IAS 12
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.7 62.5
2 65
Units
V V A A A W W/ C mJ A C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2011.Dec. http://www.cetsemi.com
CEP14N5/CEB14N5 CEF14N5
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS =500V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 7A
Dynamic Characteristics c
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss Crss
VDS = 25V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 250V, ID =14A, VGS = 10V, RGEN = 25Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 400V,ID = 14A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
ISf VSDg
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) =8A . g.Full package VSD test condition IS =8A . e.L = 7mH, IAS =12A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
VGS = 0V, IS = 14A
Min 500
2
Typ
0.32
2100 220
7 42 62 130 25 50 11 19
Max Units
1 100 -100
V µA nA nA
4V 0.38 Ω
pF pF pF
84 ns 124 ns 260 ns 50 ns 66 nC
nC nC
14 A 1.4 V
2
ID, Drain Current.