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CEB12N65 Dataheets PDF



Part Number CEB12N65
Manufacturers CET
Logo CET
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet CEB12N65 DatasheetCEB12N65 Datasheet (PDF)

CEP12N65/CEB12N65 CEF12N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP12N65 CEB12N65 CEF12N65 VDSS 650V 650V 650V RDS(ON) 0.73Ω 0.73Ω 0.73Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise.

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CEP12N65/CEB12N65 CEF12N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP12N65 CEB12N65 CEF12N65 VDSS 650V 650V 650V RDS(ON) 0.73Ω 0.73Ω 0.73Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS VGS ID IDM e 650 ±30 12 48 12 d 48d Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 250 60 PD 1.67 0.4 Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h EAS 607 IAS 9 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.6 62.5 2.5 65 Units V V A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 4. 2012.Nov. http://www.cetsemi.com CEP12N65/CEB12N65 CEF12N65 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS =650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 5.5A Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 300V, ID =12A, VGS = 10V, RGEN = 25Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 400V,ID = 12A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b ISf VSDg Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) =6A . g.Full package VSD test condition IS =6A . h.L = 15mH, IAS =9A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C. VGS = 0V, IS = 12A Min 650 2 Typ 0.61 1975 210 10 41 76 118 71 39 11 11 Max Units 1 100 -100 V µA nA nA 4V 0.73 Ω pF pF pF ns ns ns ns nC nC nC 12 A 1.4 V 2 ID, Drain Current (A) C, Capacitance (pF) CEP12N65/CEB1.


CEP12N65 CEB12N65 CEF12N65


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