CEP08N6A

CEP08N6A/CEB08N6A CEF08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP08N6A CEB08N6A CEF08N6A VDSS 600V 600V 600V RDS(ON) 1.25Ω 1.25Ω 1.25Ω ID 7.5A 7.5A 7.5A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 600 ±30 7.5 5.2 30 150 1 7.5 5.2 d 30 d 48 0.3 Single Pulsed Avalanche Energy h EAS 245 Single Pulsed Avalanche Current h IAS 7 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1 62.5 3.1 65 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.Feb http://www.cetsemi.com CEP08N6A/CEB08N6A CEF08N6A Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain ...