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CEH2321A
P-Channel Enhancement Mode Field Effect Transistor
Description
CEH2321A P-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY FEATURES -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 G(3) D(1,2,5,6,) S(4) ABSOLUTE MAXIMUM RATINGS TA = 25...
CET
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