N-Channel Power MOSFET
Ordering number : ENA1689A
BFL4007
N-Channel Power MOSFET
600V, 14A, 0.68Ω, TO-220F-3FS
http://onsemi.com
Features
•...
Description
Ordering number : ENA1689A
BFL4007
N-Channel Power MOSFET
600V, 14A, 0.68Ω, TO-220F-3FS
http://onsemi.com
Features
Reverse recovery time trr=95ns (typ.) Input capacitance Ciss=1200pF (typ.)
ON-resistance RDS(on)=0.52Ω (typ.) 10V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain to Source Voltage
VDSS
600 V
Gate to Source Voltage
VGSS
±30 V
Drain Current (DC)
IDc*1 IDpack*2
Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3
14 A 8.7 A
Drain Current (Pulse)
IDP PW≤10μs, duty cycle≤1%
49 A
Source to Drain Diode Forward Current (DC) IS
14 A
Source to Drain Diode Forward Current (Pulse) ISP
PW≤10μs, duty cycle≤1%
49 A
Allowable Power Dissipation
PD Tc=25°C (Our ideal heat dissipation condition)*3
2.0 W 40 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
196 mJ
Avalanche Current *5
IAV
8.5 A
Note :*1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=5mH, IAV=8.5A (Fig.1) *5 L≤5mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended expos...
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