BBL4001

Ordering number : ENA1356A BBL4001 N-Channel Power MOSFET 60V, 74A, 6.1mΩ, TO-220F-3SG http://onsemi.com Features ON-resistance RDS(on)1=4.7mΩ(typ.) Input capacitance Ciss=6,900pF(typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=30V, L=100μH, IAV=65A(Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C TO-220F-3SG Ratings 60 ±20 74 296 2.0 35 150 --55 to +150 370 65 Unit V V A A W W °C °C mJ A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(th) gFS RDS(on)1 RDS(on)2 Ciss Coss Crss ...