N-Channel Silicon MOSFET
ECH8616
Ordering number : ENN8191
N-Channel Silicon MOSFET
ECH8616 General-Purpose Switching Device
Applications
Featu...
Description
ECH8616
Ordering number : ENN8191
N-Channel Silicon MOSFET
ECH8616 General-Purpose Switching Device
Applications
Features
Ultrahigh-speed switching. 4V drive. Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD PT Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm)
Ratings 60
±20 3
20 1.3 1.5 150 --55 to +150
Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : FJ
Symbol
V(BR)DSS IDSS IGSS
VGS(off) yfs
RDS(on)1 RDS(on)2
Ciss Coss Crss td(on)
tr td(off)
tf
Conditions
ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=10V ID=0.5A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit.
min 60
1.2 2.2
Ratings typ
max
Unit
V
1 µA
±10 µA
2...
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