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SBE813

ON Semiconductor

Schottky Barrier Diode

Ordering number : EN8967A SBE813 Schottky Barrier Diode 30V, 3A, Low IR, Non-Monolithic Dual VEC8 Common Cathode http:...


ON Semiconductor

SBE813

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Description
Ordering number : EN8967A SBE813 Schottky Barrier Diode 30V, 3A, Low IR, Non-Monolithic Dual VEC8 Common Cathode http://onsemi.com Applications High frequency rectification (switching regulators, converters, choppers) Features Small switching noise Low leakage current and high reliability due to highly reliable planar structure Ultrasmall package permitting applied sets to be small and slim Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature VRRM VRSM IO IFSM Tj Storage Temperature Tstg Conditions 50Hz sine wave, 1 cycle Ratings 30 35 3.0 20 --55 to +125 --55 to +125 Unit V V A A °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7012-001 8 7 65 0.3 0.15 SBE813-TL-E Product & Package Information Package : VEC8 JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking 2.8 0.25 2.3 0.25 0.07 0.75 1234 0.65 2.9 1 : Anode1 2 : No Contact 3 : Anode2 4 : No Contact 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 VEC8 SE LOT No. TL Electrical Connection 8765 1234 Semiconductor Components...




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