1HP04CH

1HP04CH Small Signal MOSFET –100V, 18Ω, –170mA, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features High Voltage (100V) 4V drive High Speed Switching and Low Loss ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance Typical Applications Lithium-ion Battery Charging and Discharging Cell Balance SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS −100 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID −170 mA Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −680 mA Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD 0.6 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) Symbol RθJA Value Unit 208 °C/W www.onsemi.com VDSS −100V RDS(on) Max 18Ω@ −10V 21Ω@ −4V ID Max −170mA ELECTRICAL CONNECTION P-Channel 3 1 1 : Gate 2 : Source 3 : Drain 2 PA...