FDS5682

FDS5682 N-Channel PowerTrench® MOSFET May 2008 FDS5682 N-Channel PowerTrench® MOSFET 60V, 7.5A, 21mΩ Features „ rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5A „ rDS(ON) = 26.5mΩ, VGS = 4.5V, ID = 6.7A „ High performance trench technology for extremely low rDS(ON) „ Low gate charge General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. „ High power and current handling capability Applications „ DC/DC converters Branding Dash 1 2 3 4 SO-8 5 54 63 72 81 ©2008 Fairchild Semiconductor Corporation FDS5682 Rev. A1 1 www.fairchildsemi.com FDS5682 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) Continuous (TA = 25oC, VGS = 4.5V, RθJA = 50oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 1) Power dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) Package Marking and Ordering Information Device Marking FDS5682 Device FDS5682 Package SO-8 Reel S...