FDMS8670 N-Channel Power Trench® MOSFET
May 2009
FDMS8670
N-Channel Power Trench® MOSFET
30V, 42A, 2.6m:
tm
Features
General Description
Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Powe...
