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MUN5215DW1 Dataheets PDF



Part Number MUN5215DW1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual NPN Bias Resistor Transistors
Datasheet MUN5215DW1 DatasheetMUN5215DW1 Datasheet (PDF)

MUN5215DW1, NSBC114TDXV6, NSBC114TDP6 Dual NPN Bias Resistor Transistors R1 = 10 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrat.

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MUN5215DW1, NSBC114TDXV6, NSBC114TDP6 Dual NPN Bias Resistor Transistors R1 = 10 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable* • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C, common for Q1 and Q2, unless otherwise noted) Rating Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc Collector Current − Continuous IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 6 Vdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping† MUN5215DW1T1G SOT−363 3,000 / Tape & Reel NSVMUN5215DW1T1G* SOT−363 3,000 / Tape & Reel NSBC114TDXV6T1G SOT−563 4,000 / Tape & Reel NSBC114TDXV6T5G SOT−563 8,000 / Tape & Reel NSBC114TDP6T5G SOT−963 8,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 1 1 http://onsemi.com PIN CONNECTIONS (3) (2) (1) R1 Q1 R2 R1 (4) (5) R2 Q2 (6) MARKING DIAGRAMS 6 7E M G G 1 SOT−363 CASE 419B 7E M G G 1 SOT−563 CASE 463A R MG 1G SOT−963 CASE 527AD 7E/R M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Publication Order Number: DTC114TD/D MUN5215DW1, NSBC114TDXV6, NSBC114TDP6 THERMAL CHARACTERISTICS Characteristic Symbol MUN5215DW1 (SOT−363) One Junction Heated Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) (Note 2) (Note 1) (Note 2) PD Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA MUN5215DW1 (SOT−363) Both Junction Heated (Note 3) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) (Note 2) (Note 1) (Note 2) PD Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL Junction and Storage Temperature Range NSBC114TDXV6 (SOT−563) One.


MTB3N60E MUN5215DW1 NSBC114TDXV6


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