Document
MUN5215DW1, NSBC114TDXV6, NSBC114TDP6
Dual NPN Bias Resistor Transistors R1 = 10 kW, R2 = 8 kW
NPN Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
6
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5215DW1T1G
SOT−363
3,000 / Tape & Reel
NSVMUN5215DW1T1G*
SOT−363
3,000 / Tape & Reel
NSBC114TDXV6T1G
SOT−563
4,000 / Tape & Reel
NSBC114TDXV6T5G
SOT−563
8,000 / Tape & Reel
NSBC114TDP6T5G
SOT−963
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 1
1
http://onsemi.com PIN CONNECTIONS (3) (2) (1)
R1 Q1
R2 R1 (4) (5)
R2 Q2 (6)
MARKING DIAGRAMS
6
7E M G G
1
SOT−363 CASE 419B
7E M G G
1
SOT−563 CASE 463A
R
MG 1G
SOT−963 CASE 527AD
7E/R M G
= Specific Device Code = Date Code* = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
Publication Order Number: DTC114TD/D
MUN5215DW1, NSBC114TDXV6, NSBC114TDP6
THERMAL CHARACTERISTICS Characteristic
Symbol
MUN5215DW1 (SOT−363) One Junction Heated
Total Device Dissipation TA = 25°C
Derate above 25°C
(Note 1) (Note 2) (Note 1) (Note 2)
PD
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
RqJA
MUN5215DW1 (SOT−363) Both Junction Heated (Note 3)
Total Device Dissipation TA = 25°C
Derate above 25°C
(Note 1) (Note 2) (Note 1) (Note 2)
PD
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
RqJA
Thermal Resistance, Junction to Lead
(Note 1) (Note 2)
RqJL
Junction and Storage Temperature Range
NSBC114TDXV6 (SOT−563) One.