SSF6808A

SSF6808A 68V N-Channel MOSFET FEATURES  Advanced trench process technology  Ultra low Rdson, typical 5mohm  High avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product ID =84A BV=68V R DS (ON)=8mohm DESCRIPTION The SSF6808A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6808A is assembled in high reliability and qualified assembly house. APPLICATIONS  Power switching application SSF6808A Top View (TO-263) Absolute Maximum Ratings Parameter ID@Tc=25ْ C Continuous drain current,VGS@10V ID@Tc=100Cْ Continuous drain current,VGS@10V IDM Pulsed drain current ① Power dissipation PD@TC=25ْC Linear derating factor VGS Gate-to-Source voltage dv/dt Peak diode recovery voltage EAS EAR TJ TSTG Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range Max. 84 76 310 180 1.5 ±20 31 400 TBD –55 to +175 Units A W W/ْ C V v/ns mJ ْC Thermal Resistance Parameter RθJC Junction-to-case RθJA Junction-to-ambient Min. — — Typ. 0.83 — Max. — 62 Units ْC/W Electrical Characteristics @T J=25 ْC (unless otherwise specified) Parameter Min. Typ. BVDSS RDS(on) VGS(th) Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage 68 — —5 2.0 —— IDSS Drain-to-Source leakage current —— Max. Units —V ...