500V N-Channel MOSFET
PPJZ18NA50
500V N-Channel MOSFET
Voltage
500 V Current
18 A
Features
RDS(ON), VGS@10V,ID@9A<0.35Ω High switchin...
Description
PPJZ18NA50
500V N-Channel MOSFET
Voltage
500 V Current
18 A
Features
RDS(ON), VGS@10V,ID@9A<0.35Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive.
Mechanical Data
Case: TO-3PL Package Terminals : Solderable per MIL-STD-750, Method 2026 TO-3PL Approx. Weight : 0.182 ounces, 5.174grams
TO-3PL
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
TC=25oC Derate above 25oC
VDS VGS ID IDM EAS
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Typical Thermal resistance - Junction to Case - Junction to Ambient
RθJC RθJA
Limited only By Maximum Junction Temperature
TO-3PL 500 +30 18 72 1502 240 1.92
-55~150
0.52 50
UNITS V V A A mJ W
W/ oC
oC
oC/W
March 10,2014-REV.00
Page 1
PPJZ18NA50
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL TEST CONDITION
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Diode Forward Voltage
Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
BVDSS VGS(th) RDS(on) IDSS IGSS
VSD
VGS=0V,ID=250uA VDS=VGS,ID=2...
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