Document
ON Semiconductort
Power Transistor
For Isolated Package Applications
Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
• Electrically Similar to the Popular 2N6107 • 70 VCEO(sus) • 7 A Rated Collector Current • No Isolating Washers Required • Reduced System Cost • High Current Gain–Bandwidth Product
fT = 4 MHz (Min) Ca, IC = 500 mAdc
• UL Recognized, File #E69369, to 3500 VRMS Isolation
MJF6107
PNP SILICON POWER TRANSISTOR
7 AMPERES 70 VOLTS 34 WATTS
CASE 221D–02 TO–220 TYPE
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRMS Isolation Voltage (1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(for 1 sec, R.H. < 30%, Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTA = 25_C) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
Test No. 1 Per Fig. 13 Test No. 2 Per Fig. 14 Test No. 3 Per Fig. 15
VCEO VCB VEB VISOL
IC
70
80
5
4500 3500 1500
7 10
Vdc Vdc Vdc VRMS
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation* @ TC = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB 3 Adc
PD 34 Watts 0.27 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
PD 2 Watts
0.016
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
TJ, Tstg
–65 to +150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
RθJA
62.5 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case*
RθJC
3.7 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering Purpose
TL 260 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted
on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.
(1) Proper strike and creepage distance must be provided.
© Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 3
1
Publication Order Number: MJF6107/D
MJF6107
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = 80 Vdc, IB = 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5 Vdc, IC = 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain (IC = 2 Adc, VCE = 4 Vdc)
DC Current Gain (IC = 7 Adc, VCE = 4 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage (IC = 7 Adc, IB = 3 Adc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage (IC = 7 Adc, VCE = 4 Vdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent Gain–Bandwidth Product (2) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 500 mAdc, VCE = 4 Vdc, ftest = 1 MHz) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall–Signal Current Gain (IC = 0.5 Adc, VCE = 4 Vdc, f = 50 kHz)
Symbol
Min
VCEO(sus) ICES ICEX IEBO
hFE
VCE(sat) VBE(on)
fT
Cob hfe
70 — — —
30 5 — —
4
— 20
Max Unit
— Vdc 1 µAdc 1 µAdc 1 µAdc
90 — — 2 Vdc 2 Vdc
— MHz
250 pF ——
NOTES:
1. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.
2. fT = |hfe| • ftest.
http://onsemi.com 2
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) t, TIME (ăõs)
MJF6107
VCC +ā30 V
+11 V 0
25 µs
-ā9 V
RB 51
RC SCOPE
D1
tr, tf ≤ 10 ns DUTY CYCLE = 1.0%
-ā4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS ąD1 MUST BE FAST RECOVERY TYPE, e.g.: ąą1N5825 USED ABOVE IB ≈ 100 mA ąąMSD6100 USED BELOW IB ≈ 100 mA
2
1 0.7 0.5
0.3 0.2
0.1 0.07 0.05
0.03 0.02
0.07 0.1
Figure 1. Switching Time Test Circuit
TJ = 25°C VCC = 30 V IC/IB = 10
tr
td @ VBE(off) ≈ 5 V
0.2 0.3 0.5
1
23
IC, COLLECTOR CURRENT (AMP)
Figure 2. Turn–On Time
57
1
0.5 0.3 0.2
0.1
0.05 0.03 0.02
0.01 0.1
0.2 0.3 0.5
SINGLE PULSE RθJC(t) = r(t) RθJC TJ(pk) - TC = P(pk) RθJC(t)
1 2 3 5 10 20 30 50 100 200 300 500 1K 2K 3K 5K 10K t, TIME (ms)
Figure 3. Thermal Response
http://onsemi.com 3
IC, COLLECTOR CURRENT (AMPS)
t, TIME (ăõs)
MJF6107
15
10 50 µs 7 0.1 ms
5 0.5 ms
3
2 dc
1 0.7 0.5
0.3 0.2 0.15
1
CUR.