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MJF6107 Dataheets PDF



Part Number MJF6107
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power Transistor
Datasheet MJF6107 DatasheetMJF6107 Datasheet (PDF)

ON Semiconductort Power Transistor For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. • Electrically Similar to the Popular 2N6107 • 70 VCEO(sus) • 7 A Rated Collector Current • No Isolating Washers Required • Reduced System Cost • High Current Gain–Bandwidth Product fT = 4 MHz (Min) Ca, IC = 500 mAdc • UL Recognized, File #E69369, to 35.

  MJF6107   MJF6107



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ON Semiconductort Power Transistor For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. • Electrically Similar to the Popular 2N6107 • 70 VCEO(sus) • 7 A Rated Collector Current • No Isolating Washers Required • Reduced System Cost • High Current Gain–Bandwidth Product fT = 4 MHz (Min) Ca, IC = 500 mAdc • UL Recognized, File #E69369, to 3500 VRMS Isolation MJF6107 PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS CASE 221D–02 TO–220 TYPE MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Symbol Value Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRMS Isolation Voltage (1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(for 1 sec, R.H. < 30%, Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTA = 25_C) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous Peak Test No. 1 Per Fig. 13 Test No. 2 Per Fig. 14 Test No. 3 Per Fig. 15 VCEO VCB VEB VISOL IC 70 80 5 4500 3500 1500 7 10 Vdc Vdc Vdc VRMS Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation* @ TC = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C IB 3 Adc PD 34 Watts 0.27 W/_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C PD 2 Watts 0.016 W/_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range TJ, Tstg –65 to +150 _C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic Symbol Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient RθJA 62.5 _C/W ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case* RθJC 3.7 _C/W ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering Purpose TL 260 _C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs. (1) Proper strike and creepage distance must be provided. © Semiconductor Components Industries, LLC, 2001 April, 2001 – Rev. 3 1 Publication Order Number: MJF6107/D MJF6107 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = 80 Vdc, IB = 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5 Vdc, IC = 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain (IC = 2 Adc, VCE = 4 Vdc) DC Current Gain (IC = 7 Adc, VCE = 4 Vdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage (IC = 7 Adc, IB = 3 Adc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage (IC = 7 Adc, VCE = 4 Vdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent Gain–Bandwidth Product (2) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 500 mAdc, VCE = 4 Vdc, ftest = 1 MHz) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall–Signal Current Gain (IC = 0.5 Adc, VCE = 4 Vdc, f = 50 kHz) Symbol Min VCEO(sus) ICES ICEX IEBO hFE VCE(sat) VBE(on) fT Cob hfe 70 — — — 30 5 — — 4 — 20 Max Unit — Vdc 1 µAdc 1 µAdc 1 µAdc 90 — — 2 Vdc 2 Vdc — MHz 250 pF —— NOTES: 1. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%. 2. fT = |hfe| • ftest. http://onsemi.com 2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) t, TIME (ăõs) MJF6107 VCC +ā30 V +11 V 0 25 µs -ā9 V RB 51 RC SCOPE D1 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% -ā4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS ąD1 MUST BE FAST RECOVERY TYPE, e.g.: ąą1N5825 USED ABOVE IB ≈ 100 mA ąąMSD6100 USED BELOW IB ≈ 100 mA 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.07 0.1 Figure 1. Switching Time Test Circuit TJ = 25°C VCC = 30 V IC/IB = 10 tr td @ VBE(off) ≈ 5 V 0.2 0.3 0.5 1 23 IC, COLLECTOR CURRENT (AMP) Figure 2. Turn–On Time 57 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 SINGLE PULSE RθJC(t) = r(t) RθJC TJ(pk) - TC = P(pk) RθJC(t) 1 2 3 5 10 20 30 50 100 200 300 500 1K 2K 3K 5K 10K t, TIME (ms) Figure 3. Thermal Response http://onsemi.com 3 IC, COLLECTOR CURRENT (AMPS) t, TIME (ăõs) MJF6107 15 10 50 µs 7 0.1 ms 5 0.5 ms 3 2 dc 1 0.7 0.5 0.3 0.2 0.15 1 CUR.


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