MCH6613

Ordering number : EN6920C MCH6613 Power MOSFET 30V, 0.35A, 3.7Ω –30V, –0.2A, 10.4Ω, Complementary Dual MCPH6 http://onsemi.com Features The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting Excellent ON-resistance characteristic 1.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model N-channel P-channel 30 --30 ±10 ±10 0.35 --0.2 1.4 --0.8 0.8 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2.1 0.07 0.85 0.25 1.6 0.25 Package Dimensions unit : mm (typ) 7022A-006 2.0 654 0.15 MCH6613-TL-E 0 to 0.02 1 23 0.65 0.3 123 654 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 MCPH6 Ordering & Package Information Device Package MCH6613-TL-E ...