TIG058E8

Ordering number : ENA1381A TIG058E8 N-Channel IGBT 400V, 150A, VCE(sat);4V, Single ECH8 http://onsemi.com Features Low-saturation voltage Enhansment type Mounting Height 0.9mm, Mounting Area 8.12mm2 Halogen free compliance Low voltage drive (4V) Built-in Gate-to-Emitter protection diode dv / dt guarantee* Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES 400 V Gate-to-Emitter Voltage (DC) VGES ±6 V Gate-to-Emitter Voltage (Pulse) VGES PW≤1ms ±8 V Collector Current (Pulse) ICP CM=150μF, VGE=4V 150 A Maximum Collector-to-Emitter dv / dt dVCE / dt VCE≤320V, starting Tch=25°C 400 V / μs Channel Temperature Tch 150 °C Storage Temperature Tstg -40 to +150 °C * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-004 Top View 2.9 85 TIG058E8-TL-H 0.15 0 to 0.02 Product & Package Information Package : ECH8 JEITA, JEDEC :- Minimum Packing Quantity : 3000 pcs./reel Packing Type: TL Marking ZB TL LOT No. 2.8 0.9 0.25 2.3 0.25 ...