TIG056BF

Ordering number : ENA1775B TIG056BF N-Channel IGBT 430V, 240A, VCE(sat); 3.6V TO-220F-3FS http://onsemi.com Features Low-saturation voltage Ultrahigh speed switching Enhansment type Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (Pulse) Allowable Power Dissipation Channel Temperature VCES VGES ICP PD Tch Storage Temperature Tstg Conditions VGE=15V, CM=2000μF Tc=25°C Ratings 430 ±33 240 30 150 -55 to +150 Unit V V A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7528-002 10.16 3.18 4.7 2.54 TIG056BF-1E Ordering & Package Information Device Package Shipping TIG056BF-1E TO-220F-3FS 50 SC-67 pcs./magazine memo Pb-Free Marking Electrical Connection 2 3.3 15.87 6.68 15.8 3.23 1.47 MAX 0.8 123 2.54 2.54 12.98 2.76 0.5 1 : Gate 2 : Collector 3 : Emitter TO-220F-3FS TIG056 LOT No. 1 3 Semiconductor Components Industries, LLC, 2013 July, 2013 71013 TKIM TC-00002910/N2411 TKIM TC-00002672/90110QJ TKIM TC-00002415 No. A1775-1/6 TIG056BF Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Collector to Emitter Breakdown Voltage Collector...