Document
Ordering number : ENA0842A
TF252TH
N-Channel JFET
20V, 140 to 350μA, 1.4mS, VTFP
http://onsemi.com
Features
• High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) • Ultrasmall package facilitates miniaturization in end products • Best suited for use in electret condenser microphone for audio equipments and telephones • Excellent voltage characteristics • Excellent transient characteristics • Adoption of FBET process • Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature
VGDO IG ID PD Tj
Storage Temperature
Tstg
Conditions
Ratings --20 10 1 100 150
--55 to +150
Unit V mA mA
mW °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
LOT No. LOT No. RANK
Package Dimensions unit : mm (typ) 7031A-001
0.2 0.8 0.2
1.4 0.25 0.1
3
TF252TH-4-TL-H TF252TH-5-TL-H
0 to 0.02
1 0.45
2 0.2
1.2
0.34
0.07
12 3
1 : Drain 2 : Source 3 : Gate
VTFP
0.07
Product & Package Information
• Package
: VTFP
• JEITA, JEDEC
: SC-106A
• Minimum Packing Quantity : 8,000 pcs./reel
Packing Type: TL
Marking
TL
Electrical Connection
1
D
3
2
Semiconductor Components Industries, LLC, 2013 August, 2013
53012 TKIM/70407GB TI IM TC-00000796 No. A0842-1/7
TF252TH
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDO IG=--100μA
Cutoff Voltage
VGS(off)
VDS=2V, ID=1μA
Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance
IDSS | yfs | Ciss
Crss
VDS=2V, VGS=0V VDS=2V, VGS=0V, f=1kHz
VDS=2V, VGS=0V, f=1MHz
[Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]
Voltage Gain
GV VIN=10mV, f=1kHz
Reduced Voltage Characteristic Frequency Characteristic
ΔGVV ΔGvf
VIN=10mV, f=1kHz, VCC=2.0V → 1.5V f=1kHz to 110Hz
Total Harmonic Distortion Output Noise Voltage
THD VNO
VIN=30mV, f=1kHz VIN=0V, A curve
* : The TF252TH is classified by IDSS as follows : (unit : μA)
Rank
4
5
IDSS
140 to 240
210 to 350
Test Circuit
Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic
2.2kΩ
5pF 33μF +
VCC=2V VCC=1.5V
OSC
VTVM V THD
min --20 --0.1 140* 0.8
Ratings typ
--0.4
1.4 3.1 0.95
max
--1.0 350*
Unit
V V μA mS pF pF
1.0 --0.6
0.65 --106
--2.0 --1.0
--102
dB dB dB % dB
Ordering Information
Device TF252TH-4-TL-H TF252TH-5-TL-H
Package VTFP VTFP
Shipping 8,000pcs./reel 8,000pcs./reel
memo Pb Free and Halogen Free
No. A0842-2/7
Drain Current, ID -- μA
Drain Current, ID -- μA
TF252TH
ID -- VDS
300
250 VGS=0V
200
--0.05V
150
--0.10V
100
--0.15V
50 --0.20V
--0.25V
--0.30V
0 0 0.5 1.0 1.5 2.0
Drain-to-Source Voltage, VDS -- V IT12440
ID -- VGS
400
VDS=2V
350
300
250
200
150
100
50
0
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
Gate-to-Source
| yfs |
V-o-ltaIgDe,SVSGS
--
V
1.7
VDS=2V
1.6
VGS=0V f=1kHz
IT12442
1.5
1.4
1.3
1.2
1.1
1.0 100 150 200 250 300 350 400
Zero-Gate Voltage Drain Current, IDSS -- μA IT12444
Ciss -- VDS
10
VGS=0V f=1MHz
7
5
150Iμ2D5AS0Sμ=A350μA Drain Current, ID -- μA
Cutoff Voltage, VGS(off) -- V
Drain Current, ID -- μA
ID -- VDS
350
300 VGS=0V
250
200
--0.1V
150
100
--0.2V
50
--0.3V
--0.4V
0 012345
Drain-to-Source Voltage, VDS -- V IT12441
ID -- VGS
400
VDS=2V
350
300
250
200
Ta=75°C 25°C --25°C
150
100
50 0 --0.6
--0.60 --0.55
--0.5 --0.4 --0.3 --0.2 --0.1
0
Gate-to-Source Voltage, VGS -- V IT12443
VGS(off) -- IDSS
VDS=2V ID=1μA
--0.50
--0.45
--0.40
--0.35
--0.30
--0.25
--0.20 100 150 200 250 300 350 400
Zero-Gate Voltage Drain Current, IDSS -- μA IT12445
Crss -- VDS
3
VGS=0V f=1MHz
2
1.0 3
7 2
5
Forward Transfer Admittance, | yfs | -- mS
Reverse Transfer Capacitance, Crss -- pF
Input Capacitance, Ciss -- pF
1.0
5 7 1.0
23
5 7 10
23
Drain-to-Source Voltage, VDS -- V
IT12446
3
5 7 1.0
23
5 7 10
23
Drain-to-Source Voltage, VDS -- V
IT12447
No. A0842-3/7
Voltage Gain, GV -- dB
Total Harmonic Distortion, THD -- %
TF252TH
GV -- IDSS
1.8
GV : VCC=2V 1.6 VIN=10mV 1.4 f=1kHz
RL=2.2kΩ 1.2 Cin=5pF
1.0 IDSS : VDS=2V
0.8
0.6
0.4
0.2
0
--0.2
--0.4 100 150 200 250 300 350 400
Zero-Gate Voltage Drain Current, IDSS -- μA IT12448
THD -- VIN
2
THD : VCC=2V
f=1kHz
10 7 5
RL=2.2kΩ Cin=5pF
IDSS : VDS=2V
I DSS=150μA
3 250μA
2
350μA
1.0
7
5
3 2
0.1 0
120
50 100 150
Input Voltage, VIN -- mV
PD -- Ta
200 IT12450
Total Harmonic Distortion, THD -- %
Reduced Voltage Characteristic, ΔGVV -- dB
ΔGVV -- IDSS
--0.2
ΔGVV : VCC=2V→1.5V --0.3 VIN=10mV
f=1kHz
--0.4 RL=2.2kΩ Cin=5pF
--0.5 IDSS : VDS=2V
--0.6
--0.7
--0.8
--0.9
--1.0 100 150 200 250 300 350 400
Zero-Gate Voltage Drain Current, I.