DatasheetsPDF.com

TF252TH Dataheets PDF



Part Number TF252TH
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel JFET
Datasheet TF252TH DatasheetTF252TH Datasheet (PDF)

Ordering number : ENA0842A TF252TH N-Channel JFET 20V, 140 to 350μA, 1.4mS, VTFP http://onsemi.com Features • High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) • Ultrasmall package facilitates miniaturization in end products • Best suited for use in electret condenser microphone for audio equipments and telephones • Excellent voltage characteristics • Excellent transient characteristics • Adoption of FBET process • Halogen free compliance Specifications Absolute Maximum .

  TF252TH   TF252TH



Document
Ordering number : ENA0842A TF252TH N-Channel JFET 20V, 140 to 350μA, 1.4mS, VTFP http://onsemi.com Features • High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) • Ultrasmall package facilitates miniaturization in end products • Best suited for use in electret condenser microphone for audio equipments and telephones • Excellent voltage characteristics • Excellent transient characteristics • Adoption of FBET process • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VGDO IG ID PD Tj Storage Temperature Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. LOT No. LOT No. RANK Package Dimensions unit : mm (typ) 7031A-001 0.2 0.8 0.2 1.4 0.25 0.1 3 TF252TH-4-TL-H TF252TH-5-TL-H 0 to 0.02 1 0.45 2 0.2 1.2 0.34 0.07 12 3 1 : Drain 2 : Source 3 : Gate VTFP 0.07 Product & Package Information • Package : VTFP • JEITA, JEDEC : SC-106A • Minimum Packing Quantity : 8,000 pcs./reel Packing Type: TL Marking TL Electrical Connection 1 D 3 2 Semiconductor Components Industries, LLC, 2013 August, 2013 53012 TKIM/70407GB TI IM TC-00000796 No. A0842-1/7 TF252TH Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage V(BR)GDO IG=--100μA Cutoff Voltage VGS(off) VDS=2V, ID=1μA Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance IDSS | yfs | Ciss Crss VDS=2V, VGS=0V VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz [Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] Voltage Gain GV VIN=10mV, f=1kHz Reduced Voltage Characteristic Frequency Characteristic ΔGVV ΔGvf VIN=10mV, f=1kHz, VCC=2.0V → 1.5V f=1kHz to 110Hz Total Harmonic Distortion Output Noise Voltage THD VNO VIN=30mV, f=1kHz VIN=0V, A curve * : The TF252TH is classified by IDSS as follows : (unit : μA) Rank 4 5 IDSS 140 to 240 210 to 350 Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 2.2kΩ 5pF 33μF + VCC=2V VCC=1.5V OSC VTVM V THD min --20 --0.1 140* 0.8 Ratings typ --0.4 1.4 3.1 0.95 max --1.0 350* Unit V V μA mS pF pF 1.0 --0.6 0.65 --106 --2.0 --1.0 --102 dB dB dB % dB Ordering Information Device TF252TH-4-TL-H TF252TH-5-TL-H Package VTFP VTFP Shipping 8,000pcs./reel 8,000pcs./reel memo Pb Free and Halogen Free No. A0842-2/7 Drain Current, ID -- μA Drain Current, ID -- μA TF252TH ID -- VDS 300 250 VGS=0V 200 --0.05V 150 --0.10V 100 --0.15V 50 --0.20V --0.25V --0.30V 0 0 0.5 1.0 1.5 2.0 Drain-to-Source Voltage, VDS -- V IT12440 ID -- VGS 400 VDS=2V 350 300 250 200 150 100 50 0 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 Gate-to-Source | yfs | V-o-ltaIgDe,SVSGS -- V 1.7 VDS=2V 1.6 VGS=0V f=1kHz IT12442 1.5 1.4 1.3 1.2 1.1 1.0 100 150 200 250 300 350 400 Zero-Gate Voltage Drain Current, IDSS -- μA IT12444 Ciss -- VDS 10 VGS=0V f=1MHz 7 5 150Iμ2D5AS0Sμ=A350μA Drain Current, ID -- μA Cutoff Voltage, VGS(off) -- V Drain Current, ID -- μA ID -- VDS 350 300 VGS=0V 250 200 --0.1V 150 100 --0.2V 50 --0.3V --0.4V 0 012345 Drain-to-Source Voltage, VDS -- V IT12441 ID -- VGS 400 VDS=2V 350 300 250 200 Ta=75°C 25°C --25°C 150 100 50 0 --0.6 --0.60 --0.55 --0.5 --0.4 --0.3 --0.2 --0.1 0 Gate-to-Source Voltage, VGS -- V IT12443 VGS(off) -- IDSS VDS=2V ID=1μA --0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 100 150 200 250 300 350 400 Zero-Gate Voltage Drain Current, IDSS -- μA IT12445 Crss -- VDS 3 VGS=0V f=1MHz 2 1.0 3 7 2 5 Forward Transfer Admittance, | yfs | -- mS Reverse Transfer Capacitance, Crss -- pF Input Capacitance, Ciss -- pF 1.0 5 7 1.0 23 5 7 10 23 Drain-to-Source Voltage, VDS -- V IT12446 3 5 7 1.0 23 5 7 10 23 Drain-to-Source Voltage, VDS -- V IT12447 No. A0842-3/7 Voltage Gain, GV -- dB Total Harmonic Distortion, THD -- % TF252TH GV -- IDSS 1.8 GV : VCC=2V 1.6 VIN=10mV 1.4 f=1kHz RL=2.2kΩ 1.2 Cin=5pF 1.0 IDSS : VDS=2V 0.8 0.6 0.4 0.2 0 --0.2 --0.4 100 150 200 250 300 350 400 Zero-Gate Voltage Drain Current, IDSS -- μA IT12448 THD -- VIN 2 THD : VCC=2V f=1kHz 10 7 5 RL=2.2kΩ Cin=5pF IDSS : VDS=2V I DSS=150μA 3 250μA 2 350μA 1.0 7 5 3 2 0.1 0 120 50 100 150 Input Voltage, VIN -- mV PD -- Ta 200 IT12450 Total Harmonic Distortion, THD -- % Reduced Voltage Characteristic, ΔGVV -- dB ΔGVV -- IDSS --0.2 ΔGVV : VCC=2V→1.5V --0.3 VIN=10mV f=1kHz --0.4 RL=2.2kΩ Cin=5pF --0.5 IDSS : VDS=2V --0.6 --0.7 --0.8 --0.9 --1.0 100 150 200 250 300 350 400 Zero-Gate Voltage Drain Current, I.


SCH1433 TF252TH STK681-332-E


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)