SSF2305

SSF2305 20V P-Channel MOSFET DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 114mΩ @ VGS=-2.5V RDS(ON) < 89mΩ @ VGS=-4.5V S Schematic Diagram ● High Power and current handing capability ● Lead free product ● Surface Mount Package APPLICATIONS ●PWM applications ●Load switch ●Power management Marking and Pin Assignment PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2305 SSF2305 SOT23 - SOT23 Top View Tape Width - Quantity - ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID(25℃) ID(70℃) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -20 ±12 -3 -1.8 -10 1.25 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 ℃/W www.goodark.com Page 1 of 6 Rev.1.0 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current Gate-Body Leakage Current IDSS VDS=-20V,VGS=0V IGSS VGS=±12V,VDS=0V SSF2305 20V P-Channel MOSFET Min T...