FDB8443_F085

FDB8443_F085 N-Channel PowerTrench® MOSFET Sep 2011 FDB8443_F085 N-Channel PowerTrench® MOSFET 40V, 80A, 3.0mΩ Features „ Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 142nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter / Alternator „ Distributed Power Architecture and VRMs „ Primary Switch for 12V Systems ©2011 Fairchild Semiconductor Corporation FDB8443_F085 Rev.C1 1 www.fairchildsemi.com FDB8443_F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 146oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics (Note 1) Ratings 40 ±20 80 25 See Figure 4 531 188 1.25 -55 to +175 Units V V A mJ W W/oC oC RθJC RθJA RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.8 62 43 oC/W oC/W oC/W Package Marking and Ordering Information Device Marking FDB8443 Device FDB8443_F085 Package TO-263AB Reel Size...