FDB8443

FDB8443 N-Channel PowerTrench® MOSFET March 2013 FDB8443 N-Channel PowerTrench® MOSFET tm 40 V, 182 A, 3.0 mΩ Features „ RDS(on) = 2.3 mΩ ( Typ.)@ VGS = 10 V, ID = 80 A „ QG(tot) = 142 nC ( Typ.) „ Low Miller Charge, QGD = 32 nC( Typ.) „ UIS Capability (Single Pulse and Repetitive Pulse) „ RoHS Compliant Applications „ Power Tools „ Motor drives and Uninterruptible Power Supplies „ Synchronous Rectification „ Battery Protection Circuit D G S D2-PAK (TO-263) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID IDM EAS PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Continuous (TA = 25oC, RθJA = 43oC/W) - Pulsed Single Pulse Avalanche Energy (Note 1) Power Dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature FDB8443 40 ±20 182* 129* 120 25 See Figure 4 531 188 1.25 -55 to +175 *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter RθJC RθJA RθJA Thermal Resistance Junction to Case, Max. Thermal Resistance Junction to Ambient, Max. (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area, Max. FDB8443 0.8 62 43 Unit V V A mJ W W/oC oC Unit oC/W oC/W oC/W ©2010 Fairchild Semiconductor Corporation FDB8443 Rev. C1 1 www.f...