D884

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD884 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20C package ·High voltage;high speed ·Large PC APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATNIGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Open emitter Open base Open collector ICP Collector current-Peak ICP Collector current-Peak PT Total power dissipation Tj Junction temperature Tstg Storage temperature nonrepetitive TC=25 VALUE 330 200 6 7 10 15 40 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD884 CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 VCE(sat) Collector-emitter saturation voltage IC=5A ;IB=0.5A VBE(sat) Base-emitter saturation voltage IC=5A ;IB=0.5A ICES Collector cut-off current VCE=330V; VEB=0 VCE=300V; VEB=0,Ta=100 IEBO Emitter cut-off current VEB=6.0V; IC=0 hFE DC current gain tf Fall time IC=5A ; VCE=4V IC=5A ;-VEB=5V IB1 =0.8A;RB=0.5> MIN TYP. MAX UNIT 200 V 1.0 V 1.2 V 0.1 mA 1.0 1.0 mA 10 45 0.75 µs 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com Product Specification 2...