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SSF7N60F Dataheets PDF



Part Number SSF7N60F
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description 600V N-Channel MOSFET
Datasheet SSF7N60F DatasheetSSF7N60F Datasheet (PDF)

Main Product Characteristics VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A TO-220F Features and Benefits  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF7N60F 600V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techni.

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Main Product Characteristics VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A TO-220F Features and Benefits  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF7N60F 600V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=15.7mH Avalanche Current @ L=15.7mH Operating Junction and Storage Temperature Range Max. 7 4.4 28 48 0.38 600 ± 30 607.9 8.8 -55 to + 150 Units A W W/°C V V mJ A °C Www.goodark.com Page 1 of 7 Rev.1.0 SSF7N60F 600V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. — — — Max. 2.6 62 40 Units ℃/W ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 600 — — 2 — — — — -100 — — — — — — — — — — Typ. — 0.9 2.07 — 1.92 — — — — 40.6 5.9 17.9 15.7 35.2 136.2 58.7 1171 130 14 Max. — 1.0 — 4 — 1 50 100 — — — — — — — — — — — Units V Ω V μA nA nC ns pF Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 2A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 600V,VGS = 0V TJ = 125℃ VGS =30V VGS = -30V ID = 7A, VDS=480V, VGS = 10V VGS=10V, VDS=300V, RL=42.85Ω, RGEN=25Ω ID=7A VGS = 0V VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. —— 7 — — 28 — 0.89 1.3 — 368.7 — — 3790 — Units A A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=7A, VGS=0V TJ = 25°C, IF =7A, di/dt = 100A/μs Www.goodark.com Page 2 of 7 Rev.1.0 Test Circuits and Waveforms SSF7N60F 600V N-Channel MOSFET Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. ⑥ The maximum current rating is limited by bond-wires. Www.goodark.com Page 3 of 7 Rev.1.0 Typical Electrical and Thermal Characteristics SSF7N60F 600V N-Channel MOSFET Figure 1: Typical Output Characteristics Figure 2. Gate to source cut-off voltage Figure 3. Drain-to-Source Breakdown Voltage vs. Temperature Figure 4: Normalized On-Resistance Vs. Case Temperature Www.goodark.com Page 4 of 7 Rev.1.0 Typical Electrical and Thermal Characteristics SSF7N60F 600V N-Channel MOSFET Figure 5. Maximum Drain Current Vs. Case Temperature Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case Www.goodark.com Page 5 of 7 Rev.1.0 Mechanical Data TO220F PACKAGE OUTLINE DIMENSION SSF7N60F 600V N-Channel MOSFET Symbol A A1 A2 A3 B1 B2 B3 C C1 C2 D D1 D2 D3 E E1 E2 E3 E4 ϴ Dimension In Millimeters Min Nom Max 9.960 10.160 7.000 10.360 3.080 9.260 15.670 3.180 9.460 15.870 3.280 9.660 16.070 4.500 4.700 4.900 6.480 6.680 6.880 3.200 3.300 3.400 15.600 9.550 15.800 9.750 16.000 9.950 2.54 (TYP) - - 1.470 0.700 0.800 0.900 0.250 0.350 0.450 2.340 2.540 2.740 0.700 1.0*450 0.450 0.500 0.600 2.560 2.760 2.960 300 Dimension In Inches Min Nom Max 0.392 0.400 0.408 0.276 0.000 0.000 0.121 0.365 0.617 0.125 0.372 0.625 0.129 0.380 0.633 0.17.


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