Document
Main Product Characteristics
VDSS
600V
RDS(on) 0.9ohm(typ.)
ID 7A
TO-220F
Features and Benefits
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product
SSF7N60F
600V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=15.7mH Avalanche Current @ L=15.7mH Operating Junction and Storage Temperature Range
Max. 7 4.4 28 48
0.38 600 ± 30 607.9 8.8 -55 to + 150
Units
A
W W/°C
V V mJ A °C
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Page 1 of 7
Rev.1.0
SSF7N60F
600V N-Channel MOSFET
Thermal Resistance
Symbol RθJC
RθJA
Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. — — —
Max. 2.6 62 40
Units ℃/W ℃/W ℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min. 600 — — 2 — — — — -100 — — — — — — — — — —
Typ. — 0.9 2.07 — 1.92 — — — — 40.6 5.9 17.9 15.7 35.2
136.2 58.7 1171 130 14
Max. — 1.0 — 4 — 1 50 100 — — — — — — — — — — —
Units V Ω V μA nA nC
ns
pF
Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 2A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 600V,VGS = 0V TJ = 125℃ VGS =30V VGS = -30V ID = 7A, VDS=480V, VGS = 10V VGS=10V, VDS=300V, RL=42.85Ω, RGEN=25Ω ID=7A
VGS = 0V VDS = 25V ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max.
——
7
— — 28
— 0.89 1.3 — 368.7 — — 3790 —
Units A
A V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=7A, VGS=0V TJ = 25°C, IF =7A, di/dt = 100A/μs
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Rev.1.0
Test Circuits and Waveforms
SSF7N60F
600V N-Channel MOSFET
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. ⑥ The maximum current rating is limited by bond-wires.
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Rev.1.0
Typical Electrical and Thermal Characteristics
SSF7N60F
600V N-Channel MOSFET
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage vs. Temperature
Figure 4: Normalized On-Resistance Vs. Case Temperature
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Page 4 of 7
Rev.1.0
Typical Electrical and Thermal Characteristics
SSF7N60F
600V N-Channel MOSFET
Figure 5. Maximum Drain Current Vs. Case Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.0
Mechanical Data
TO220F PACKAGE OUTLINE DIMENSION
SSF7N60F
600V N-Channel MOSFET
Symbol
A A1 A2 A3 B1 B2 B3 C C1 C2 D
D1 D2 D3 E E1
E2 E3 E4
ϴ
Dimension In Millimeters
Min Nom Max
9.960
10.160 7.000
10.360
3.080 9.260 15.670
3.180 9.460 15.870
3.280 9.660 16.070
4.500
4.700
4.900
6.480
6.680
6.880
3.200
3.300
3.400
15.600 9.550
15.800 9.750
16.000 9.950
2.54 (TYP)
- - 1.470
0.700
0.800
0.900
0.250
0.350
0.450
2.340
2.540
2.740
0.700
1.0*450
0.450
0.500
0.600
2.560
2.760
2.960
300
Dimension In Inches
Min Nom Max
0.392
0.400
0.408
0.276
0.000
0.000
0.121 0.365 0.617
0.125 0.372 0.625
0.129 0.380 0.633
0.17.