SSF18N50F

Main Product Characteristics VDSS 500V RDS(on) 0.22ohm(typ.) ID 18A Features and Benefits TO- 220F  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF18N50F 500V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=5.2mH Avalanche Current @ L=5.2mH Operating Junction and Storage Temperature Range Max. 18 10.8 72 38 0.3 500 ± 30 315 11 -55 to + 150 Units A W W/°C V V mJ A °C www.goodark.com Page 1 of 7 Rev.1.0 SSF18N50F 500V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient ...