Power F-MOS FETs
2SK2377
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed q High-spee...
Power F-MOS FETs
2SK2377
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive
s Applications
q Non-contact relay q Solenoid drive q Motor drive q Control equipment q Switching mode
regulator
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Symbol
Rating
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC Pulse
Avalanche energy capability
VDSS VGSS ID IDP EAS *
170 ±20 ±20 ±40 200
Allowable power dissipation
TC= 25˚C Ta= 25˚C
PD
50 2
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
* L=1mH, IL= 20A, 1 pulse
Unit V V A A mJ
W
˚C ˚C
s Electrical Characteristics (Tc = 25˚C)
Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance Diode forward voltage Input capacitance Output capacitance Feedback capacitance Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance
Symbol IDSS IGSS VDSS Vth RDS(on) 1 RDS(on) 2 | Yfs | VDSF Ciss Coss Crss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a)
Condition VDS=140V, VGS= 0 VGS=±20V, VDS= 0 ID=1mA, VGS= 0 VDS=10V, ID=1mA VGS=10V, ID=10A VGS= 4V, ID=10A VDS=10V, ID=10A IDR=20A, VGS= 0
VDS=10V, VGS= 0, f=1MHz
VDD=100V, ID=10A VGS=10V, RL=10Ω
14.0±0.5 Solder Dip 4.0
16.7±0.3 7.5±0.2
0....