MCH6660

MCH6660 Power MOSFET 20V, 136mΩ, 2A, –20V, 266mΩ, –1.5A Complementary Dual www.onsemi.com Features ON-resistance Nch : RDS(on)1=105mW(typ.) Pch : RDS(on)1=205mW(typ.) Pb-Free, Halogen Free and RoHS Compliance Ultrasmall Package MCPH6(2.0mm×2.1mm×0.85mmt) Nch MOSFET and Pch MOSFET are put in MCPH6 Package 1.8V Drive ESD Diode - Protected Gate Applications General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tj Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit N-channel P-channel 20 --20 ±10 ±10 2 --1.5 8 --6 0.8 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions unit : mm (typ) 7022A-006 2.0 654 0.15 MCH6660-TL-H MCH6660-TL-W Product & Package Information Package : MCPH6 JEITA, JEDEC : SC-88, SC-70-6, SOT-363 Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking 2.1 0.07 0.85 0.25 1.6 0.25 LOT No. LOT No. 0 to 0.02 1 23 0.65 0.3 123 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 ...