Power MOSFET
MCH3477
Power MOSFET
20V, 38mΩ, 4.5A, Single N-Channel
www.onsemi.com
Features
High Speed Switching 1.8V Drive ...
Description
MCH3477
Power MOSFET
20V, 38mΩ, 4.5A, Single N-Channel
www.onsemi.com
Features
High Speed Switching 1.8V Drive ESD Diode-Protected Gate Low On-Resistance Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage Drain Current (DC)
VGSS ID
Drain Current (Pulse) PW10s, duty cycle1%
IDP
Power Dissipation
When mounted on ceramic substrate (900mm20.8mm)
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Thermal Resistance Ratings
Parameter
Junction to Ambient When mounted on ceramic substrate (900mm20.8mm)
Symbol RJA
Value 20
12 4.5
18
Unit V V A
A
1.0
150 55 to +150
W
C C
Value
Unit
125 C/W
VDSS 20V
RDS(on) Max 38 mΩ@4.5V 61 mΩ@2.5V 99 mΩ@1.8V
ID Max 4.5A
Electrical Connection
N-Channel
3
1
1 : Gate 2 : Source 3 : Drain 2
Packing Type:TL
Marking
LOT No. LOT No.
FJ
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015 January 2015 - Rev. 2
1
Publication Order Number : MCH3477/D
Electrical Characteristics at Ta 25C
Parameter
Symbol
Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate t...
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