NDPL070N10B

NDPL070N10B Power MOSFET 100V, 10.8mΩ, 70A, N-Channel This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features  Low On-Resistance  Low Gate Charge  High Speed Switching  100% Avalanche Tested  Pb-Free and RoHS compliance Applications  Battery Protection  Motor Drive  Primary Side Switch  Secondary Side Synchronous Rectification SPECIFICATION ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW10s, duty cycle1% Power Dissipation Tc=25C Junction Temperature VDSS VGSS ID IDP PD Tj 100 V ±20 V 70 A 280 A 2.1 72 W 175 C Storage Temperature Tstg 55 to +175 C Source Current (Body Diode) IS 70 A Avalanche Energy (Single Pulse) (Note 2) EAS 82 mJ Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds TL 260 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : VDD=48V, L=100H, IAV=30A (Fig.1) Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient (Note 3) Note 3 : Insertion mounted Symbo...