NDBA180N10B

NDBA180N10B Power MOSFET 100V, 2.8mΩ, 180A, N-Channel www.onsemi.com Features Ultra Low On-Resistance Low Gate Charge High Speed Switching 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C VDSS VGSS ID IDL IDP PD Junction Temperature Tj Storage Temperature Tstg Source Current (Body Diode) Avalanche Energy (Single Pulse) *1 Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds IS EAS TL Value 100 ±20 180 100 600 200 175 −55 to +175 100 451 260 Unit V V A A A W °C °C A mJ °C VDSS 100V RDS(on) Max 2.8mΩ@ 15V 3.3mΩ@ 10V ID Max 180A Electrical Connection N-Channel 2,4 1 : Gate 1 2 : Drain 3 : Source 4 : Drain 3 Marking Thermal Resistance Ratings Parameter Symbol Value Junction to Case Steady State RθJC Junction to Ambient *2 RθJA Note : *1 VDD=48V, L=100μH, IAV=70A (Fig.1) *2 Surface mounted on FR4 board using recommended footprint 0.75 62.5 Unit °C/W Packing Type:TL SSttrreesssseess eexxcceeeeddiinngg tthhoossee lliisstteedd iinn tthhee MMaaxxiimmuumm RRaattiinnggss ttaabbllee mmaayy ddaammaaggee tthhee ddeevviiccee.. IIff aannyy ooff tthheessee lliimmiittss aarree eexxcceeeeddeedd,, ddeevviiccee ffuunnccttiioonnaalliittyy sshhoouulldd nnoott bbee aassssuummeedd,, d...