Power MOSFET
MTY20N50E
Preferred Device
Power MOSFET 20 Amps, 500 Volts
N−Channel TO−264
This high voltage MOSFET uses an advanced te...
Description
MTY20N50E
Preferred Device
Power MOSFET 20 Amps, 500 Volts
N−Channel TO−264
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Robust High Voltage Termination Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation Derate above 25°C
VDSS VDGR
VGS VGSM
ID ID IDM PD
500 500
± 20 ± 40 20 13.9 60
250 2.0
Operating and Storage Temperature Range
TJ, Tstg
−55 to 150
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 10 mH, RG = 25 Ω)
Thermal Resistance − Junction to Case Thermal Resistance ...
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