Power MOSFET
MTB75N05HD
Preferred Device
Power MOSFET 75 Amps, 50 Volts
N−Channel D2PAK
This Power MOSFET is designed to withstand hi...
Description
MTB75N05HD
Preferred Device
Power MOSFET 75 Amps, 50 Volts
N−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Short Heatsink Tab Manufactured − Not Sheared Specially Designed Leadframe for Maximum Power Dissipation w These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
VDSS
50
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
VDGR
50
Gate−to−Source Voltage − Continuous
VGS
± 20
Drain Current − Continuous
ID 75
Drain Current − Continuous @ 100°C
ID 65
Drain Current − Single Pulse (tp ≤...
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