FDD6676AS

FDD6676AS FDD6676AS 30V N-Channel PowerTrench® SyncFET™ April 2008 tm General Description The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic SyncFET technology. Applications DC/DC converter Low side notebook Features 90 A, 30 V RDS(ON) = 5.7 mΩ @ VGS = 10 V RDS(ON) = 7.1 mΩ @ VGS = 4.5 V Includes SyncFET schottky body diode Low gate charge (46nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability RoHS Compliant D G S DTO-P-2A5K2 (TO-252) Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) Package Marking and Ordering Information Device Marking Device Reel Size FDD6676AS FDD6676AS 13’’ D G S Ratings 30 ±20 90 100 70 3.1 1.3 –55 to +15...