80V N-Channel PowerTrench MOSFET
FDD3580/FDU3580
August 2001
FDD3580/FDU3580
80V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSF...
Description
FDD3580/FDU3580
August 2001
FDD3580/FDU3580
80V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Features
7.7 A, 80 V.
RDS(ON) = 29 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 6 V
Low gate charge (34nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
D
D G
S DT(O-TP(-TOD2AO5--KP2-2A5K2)
GDS
I-PAK (TO-251AA)
G
Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current-Continuous (Note 1a)
Maximum Drain Current – Pulsed Maximum Power Dissipation @TC = 25oC
TA = 25oC TA = 25oC
(Note 1) (Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to- Case
RθJA Thermal Resistance, Junction-to- Ambient
(Note 1) (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD3580
FDD3580
13’’
FDU3580
FDU3580
Tube
Ratings
80 ± 20 7.7 50 42 3.8 1.6 −55 to +175
3.5 96
Tape width 16mm N/A
S
Units
V V A
W
°C
°C/W °C/...
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