SSF2122E

Main Product Characteristics VDSS 20V RDS(on) 15.2mohm(typ.) ID 7A ① DFN 3x3-8L Features and Benefits  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF2122E 20V Dual N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. 7① 5① 42 1.4 20 ± 12 -55 to + 150 Units A W V V °C www.goodark.com Page 1 of 8 Rev.1.0 SSF2122E 20V Dual N-Channel MOSFET Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate threshold voltage Drain-to...