16M x 16 Bit DDR DRAM
Document Title 16M X 16 Bit DDR DRAM
Revision History
Rev. No. History
1.0 Initial issue
A48P4616B
16M X 16 Bit DDR DRA...
Description
Document Title 16M X 16 Bit DDR DRAM
Revision History
Rev. No. History
1.0 Initial issue
A48P4616B
16M X 16 Bit DDR DRAM
Issue Date
January 9, 2014
Remark
Final
(January, 2014, Version 1.0)
AMIC Technology, Corp.
A48P4616B
16M X 16 Bit DDR DRAM
Features
CAS Latency and Frequency
CAS Latency
2 2.5 3
Maximum Operating Frequency (MHz) DDR400 (5) 133 166 200
Double data rate architecture: two data transfers per clock cycle.
Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver.
DQS is edge-aligned with data for reads and is centeraligned with data for writes.
Differential clock inputs (CK and CK )
Four internal banks for concurrent operation. Data mask (DM) for write data. DLL aligns DQ and DQS transitions with CK transitions. Commands entered on each positive CK edge; data and
data mask referenced to both edges of DQS. Burst lengths: 2, 4, or 8 CAS Latency: 2/2.5/3 Auto Precharge option for each burst access Auto Refresh and Self Refresh Modes 8192 refresh cycles / 64ms (4 banks concurrent refresh) 2.5V (SSTL_2 compatible) I/O VDD = VDDQ = 2.5V ± 0.2V Industrial operating temperature range: -40ºC to +85ºC
for -U series. Available Lead Free packaging All Pb-free (Lead-free) products are RoHS compliant
General Description
The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n prefetch...
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