FDD107AN06LA0

FDD107AN06LA0 January 2004 FDD107AN06LA0 N-Channel PowerTrench® MOSFET 60V, 10A, 107mΩ Features rDS(ON) = 92mΩ (Typ.), VGS = 5V, ID = 10A Qg(tot) = 4.2nC (Typ.), VGS = 5V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly developmental type 83524 Applications Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems DRAIN (FLANGE) D GATE SOURCE TO-252AA FDD SERIES G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 25oC, VGS = 5V) Continuous (TC = 100oC, VGS = 5V) Continuous (TA = 25oC, VGS = 5V, RθJA = 52oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 1) Power dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature Ratings 60 ±20 10.9 10 7.1 3.4 Figure 4 9 25 0.17 -55 to 175 Units V V A A A A A mJ W W/oC oC Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 6.0 100 52 oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the ...