FDC699P

FDC699P January 2004 FDC699P P-Channel 2.5V PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications Battery management Load Switch Battery protection Features –7 A, –20 V RDS(ON) = 22 mΩ @ VGS = –4.5 V RDS(ON) = 30 mΩ @ VGS = –2.5 V High performance trench technology for extremely low RDS(ON) Fast switching speed FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size G S S SuperSOT-6TM FLMP S S S 16 25 34 Bottom Drain Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) Package Marking and Ordering Information Device Marking Device Reel Size .699 FDC699P 7’’ Ratings –20 ±12 –7 –40 2 1.5 –55 to +150 60 111 0.5 Tape width 8mm 2004 Fairchild Semiconductor Corporation Units V V A W °C °C/W Quantity 3000 units FDC699P Rev C2 (W) FDC699P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions ...