MTV16N50E

MTV16N50E Advance Information TMOS E−FET.™ Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature http://onsemi.com TMOS POWER FET 16 AMPERES, 500 VOLTS RDS(on) = 0.40 W D3PAK Surface Mount CASE 433−01 Style 2 D N−Channel ®G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage — Continuous Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 μs) Total Power Dissipation Derate above 25°C Total Power Di...