B722

SavantIC Semiconductor wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors Product Specification 2SB722 DESCRIPTION ·With TO-3 package ·High current capability ·High power dissipation APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VCBO VCEO Collector-base voltage Collector-emitter voltage Open emitter Open base VEBO IC IB PC Tj Emitter-base voltage Open collector Collector current Base current Collector power dissipation TC=25 Junction temperature Tstg Storage temperature VALUE -160 -160 -5 -15 -4 150 150 -55~200 UNIT V V V A A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A VBE Base-emitter on voltage ICBO Collector cut-off current IC=-2A ; VCE=-5V VCB=-160V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE DC current gain IC=-1A ; VCE=-5V Product Specification 2SB722 MIN TYP. MAX UNIT -160 V -160 V -5 V -3.0 V -1.5 V -0.1 mA -0.1 mA 50 2 SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Product Sp...