30V N-Channel MOSFET
AON6534
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(o...
Description
AON6534
30V N-Channel AlphaMOS
General Description
Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
Application
DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested 100% Rg Tested
30V 30A < 8mΩ < 12mΩ
Top View
DFN5X6 Bottom View
PIN1
Top View
18 27 36 45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain CurrentG
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.05mH C
IDSM
IAS EAS
VDS Spike
100ns
VSPIKE
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 30 23 109 20 15 32 26 36 25 10 4.1 2.6
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 24 53 3.5
Max 30 64 5
D
S
Units V V A
A A mJ V W W °C
Units °C/W °C/W °C/W
Rev 1: Mar 2012
www.aosmd.com
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AON6534
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PA...
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