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MTDF1C02HD

ON Semiconductor

Power MOSFET

MTDF1C02HD Preferred Device Power MOSFET 1 Amp, 20 Volts Complementary Micro8t These Power MOSFET devices are capable of...


ON Semiconductor

MTDF1C02HD

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Description
MTDF1C02HD Preferred Device Power MOSFET 1 Amp, 20 Volts Complementary Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Miniature Micro8 Surface Mount Package − Saves Board Space Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive − Can Be Driven by Logic ICs Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Specified Mounting Information for Micro8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Negative sign for P−Channel devices omitted for clarity Rating Symbol Max Drain−to−Source Voltage N−Channel P−Channel VDSS ...




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