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MMSF10N02Z

ON Semiconductor

Power MOSFET

MMSF10N02Z Preferred Device Power MOSFET 10 Amps, 20 Volts N−Channel SO−8 EZFETst are an advanced series of Power MOSFET...


ON Semiconductor

MMSF10N02Z

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Description
MMSF10N02Z Preferred Device Power MOSFET 10 Amps, 20 Volts N−Channel SO−8 EZFETst are an advanced series of Power MOSFETs which contain monolithic back−to−back zener diodes. These zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Zener Protected Gates Provide Electrostatic Discharge Protection Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive − Can Be Driven by Logic ICs Miniature SO−8 Surface Mount Package − Saves Board Space Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO−8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 70°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation @ TA = 25°C (Note 1.) VDSS VDGR VGS ID ID IDM PD 20 Vdc 20 Vdc ± 12 Vdc 10 Adc 7.0 80 Apk 2.5 Watts Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal ...




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