Power MOSFET
MMSF10N02Z
Preferred Device
Power MOSFET 10 Amps, 20 Volts
N−Channel SO−8
EZFETst are an advanced series of Power MOSFET...
Description
MMSF10N02Z
Preferred Device
Power MOSFET 10 Amps, 20 Volts
N−Channel SO−8
EZFETst are an advanced series of Power MOSFETs which contain monolithic back−to−back zener diodes. These zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
Zener Protected Gates Provide Electrostatic Discharge Protection Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive − Can Be Driven by Logic ICs Miniature SO−8 Surface Mount Package − Saves Board Space Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 70°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation @ TA = 25°C
(Note 1.)
VDSS VDGR VGS
ID ID IDM PD
20 Vdc
20 Vdc
± 12 Vdc
10 Adc 7.0 80 Apk
2.5 Watts
Operating and Storage Temperature Range TJ, Tstg − 55 to 150
°C
Thermal ...
Similar Datasheet