MCH5837

Ordering number : ENA0781A MCH5837 SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with an N-channel silicon MOSFET and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. 1.8V drive. [SBD] Short reverse recovery time. Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Marking : YB Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Ratings Unit 20 V ±10 V 2A 8A 0.8 W 150 °C --55 to +125 °C Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely h...