Power Transistors
2SC4953
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2
3.0±0.5
■ Features
High-speed switching
φ 3.2±0.1
15.0±0.5
High collector-base voltage (Emitter open) VCBO
Wide safe operation area
Satisfactory linearity of forward current transfer ratio hFE ...
