2SK2958(L),2SK2958(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 5.5mΩ typ.
4V gate drive devices. High speed switching
Outline
LDPAK
D
G
S
ADE-208-568B (Z) 3rd. Edition Jun 1998
44
1 2 3
1 2 3
1. Gate 2. Drain 3. Source 4. Drain
2SK2958(L),2SK2958(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symb...
