MTD1P40E

MTD1P40E Preferred Device Advance Information Power MOSFET 1 Amp, 400 Volts P−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature http://onsemi.com 1 AMPERES 400 VOLTS RDS(on) = 8 Ω P−Channel D G S MARKING DIAGRAM 4 12 3 Y WW T CASE 369A DPAK STYLE 2 = Year = Work Week = MOSFET YWW T 1P40E PIN ASSIGNMENT 4 Drain This document contains information on a new product. Specifications and information herein are subject to change without notice. © Semiconductor Components Industries, LLC, 2004 August, 2004 − Rev. XXX 1 1 23 Gate Drain Source ORDERING INFORMATION Device Package Shipping MT...