Document
Ordering number : ENA1892B
ECH8673
Power MOSFET
40V, 3.5A, 85mΩ, –40V –2.5A, 163mΩ, Complementary Dual ECH8
http://onsemi.com
Features
• ON-resistance Nch: RDS(on)1=65mΩ(typ.), Pch: ON-resistance RDS(on)1=125mΩ(typ.) • 4V drive • Halogen free compliance • Nch+Pch MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature
VDSS VGSS ID IDP PD PT Tch
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) 1unit When mounted on ceramic substrate (1200mm2×0.8mm)
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model
N-channel P-channel 40 --40
±20 ±20 3.5 --2.5 30 --30
1.3 1.5 150 --55 to +150
Unit V V A A W W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7011A-001
Top View 2.9
85
ECH8673-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TU
2.8 0.9 0.25 2.3 0.25
1 0.65
4 0.3
Bottom View
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1
ECH8
TL
Electrical Connection
87 6 5
Lot No.
1234
0.07
Semiconductor Components Industries, LLC, 2013 August, 2013
80713 TKIM TC-00002982/61312 TKIM/D0810PE TKIM TC-00002347 No. A1892-1/8
ECH8673
Electrical Characteristics at Ta=25°C
Parameter
Symbol
[N-channel] Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Diode Forward Voltage
V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss
Coss
Crss
td(on) tr td(off) tf Qg
Qgs
Qgd
VSD
V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss
Coss
Crss
td(on) tr td(off) tf Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V VDS=40V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=10V ID=1A, VGS=4.5V ID=1A, VGS=4V
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=20V, VGS=10V, ID=3.5A
IS=3.5A, VGS=0V
ID=--1mA, VGS=0V VDS=--40V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--1.5A ID=--1.5A, VGS=--10V ID=--0.75A, VGS=--4.5V ID=--0.75A, VGS=--4V
VDS=--20V, f=1MHz
See specified Test Circuit.
VDS=--20V, VGS=--10V, ID=--2.5A
IS=--2.5A, VGS=0V
Ratings min typ max
Unit
40
1.2 1.7 65 105 125 230 36 9.9 5.8
10.6 18.5
9.8 5.3 1.1 1.1 0.84
V 1 μA ±10 μA 2.6 V
S 85 mΩ 147 mΩ 175 mΩ
pF pF pF ns ns ns ns nC nC nC 1.2 V
--40
--1.2
2.7 125 190 215 198
36 8.1 5.8 10.3 27.6 17.3 5.9 0.84 1.3 --0.87
--1 ±10 --2.6 163 266 301
--1.2
V μA μA V S
mΩ
mΩ
mΩ pF pF pF ns ns ns ns nC nC nC V
No. A1892-2/8
Switching Time Test Circuit [N-channel]
VIN 10V
0V
VIN
PW=10μs D.C.≤1%
G
VDD=20V
ID=2A RL=10Ω D VOUT
ECH8673 P.G 50Ω S
ECH8673
[P-channel]
VIN 0V --10V
VIN
PW=10μs D.C.≤1%
G
VDD= --20V
ID= --1.5A RL=13Ω D VOUT
ECH8673 P.G 50Ω S
Ordering Information
Device ECH8673-TL-H
Package ECH8
Shipping 3,000pcs./reel
memo Pb Free and Halogen Free
Drain Current, ID -- A 16.0V 10.0V 6.0V 4.5V
3.5
ID -- VDS
[Nch]
4.0V
3.0
2.5
2.0
3.5V
1.5
1.0
0.5 VGS=3.0V
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain RtoDSoSu(rocenV)ol-t-ageV, GVDSS -- V
IT16156
[Nch]
250
Ta=25°C
200
ID=1A 2A
150
100
50
0 0 2 4 6 8 10 12 14 16
Gate to Source Voltage, VGS -- V IT16158
Static Drain to Source On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
7.0
6.5 VDS=10V
ID -- VGS
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
Ta=75°C 25°C --25°C
2.0
1.5
1.0
0.5 0 0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate
to Source Voltage,
RDS(on) --
VTaGS
--
V
250
[Nch]
4.5 5.0 IT16157
[Nch]
200
150 100
VVGGVS=SG4=S.40=.V51V,0I,.0DIVD=,=1IA1DA=2A
50
0 --60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT16159
No. A1892-3/8
Static Drain to Source On-State Resistance, RDS(on) -- mΩ
ECH8673
Forward Transfer Admittance, | yfs | -- S
Switching.