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ECH8673 Dataheets PDF



Part Number ECH8673
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet ECH8673 DatasheetECH8673 Datasheet (PDF)

Ordering number : ENA1892B ECH8673 Power MOSFET 40V, 3.5A, 85mΩ, –40V –2.5A, 163mΩ, Complementary Dual ECH8 http://onsemi.com Features • ON-resistance Nch: RDS(on)1=65mΩ(typ.), Pch: ON-resistance RDS(on)1=125mΩ(typ.) • 4V drive • Halogen free compliance • Nch+Pch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel .

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Ordering number : ENA1892B ECH8673 Power MOSFET 40V, 3.5A, 85mΩ, –40V –2.5A, 163mΩ, Complementary Dual ECH8 http://onsemi.com Features • ON-resistance Nch: RDS(on)1=65mΩ(typ.), Pch: ON-resistance RDS(on)1=125mΩ(typ.) • 4V drive • Halogen free compliance • Nch+Pch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) 1unit When mounted on ceramic substrate (1200mm2×0.8mm) Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model N-channel P-channel 40 --40 ±20 ±20 3.5 --2.5 30 --30 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-001 Top View 2.9 85 ECH8673-TL-H 0.15 0 to 0.02 Product & Package Information • Package : ECH8 • JEITA, JEDEC :- • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking TU 2.8 0.9 0.25 2.3 0.25 1 0.65 4 0.3 Bottom View 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 ECH8 TL Electrical Connection 87 6 5 Lot No. 1234 0.07 Semiconductor Components Industries, LLC, 2013 August, 2013 80713 TKIM TC-00002982/61312 TKIM/D0810PE TKIM TC-00002347 No. A1892-1/8 ECH8673 Electrical Characteristics at Ta=25°C Parameter Symbol [N-channel] Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0V VDS=40V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=10V ID=1A, VGS=4.5V ID=1A, VGS=4V VDS=20V, f=1MHz See specified Test Circuit. VDS=20V, VGS=10V, ID=3.5A IS=3.5A, VGS=0V ID=--1mA, VGS=0V VDS=--40V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--1.5A ID=--1.5A, VGS=--10V ID=--0.75A, VGS=--4.5V ID=--0.75A, VGS=--4V VDS=--20V, f=1MHz See specified Test Circuit. VDS=--20V, VGS=--10V, ID=--2.5A IS=--2.5A, VGS=0V Ratings min typ max Unit 40 1.2 1.7 65 105 125 230 36 9.9 5.8 10.6 18.5 9.8 5.3 1.1 1.1 0.84 V 1 μA ±10 μA 2.6 V S 85 mΩ 147 mΩ 175 mΩ pF pF pF ns ns ns ns nC nC nC 1.2 V --40 --1.2 2.7 125 190 215 198 36 8.1 5.8 10.3 27.6 17.3 5.9 0.84 1.3 --0.87 --1 ±10 --2.6 163 266 301 --1.2 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V No. A1892-2/8 Switching Time Test Circuit [N-channel] VIN 10V 0V VIN PW=10μs D.C.≤1% G VDD=20V ID=2A RL=10Ω D VOUT ECH8673 P.G 50Ω S ECH8673 [P-channel] VIN 0V --10V VIN PW=10μs D.C.≤1% G VDD= --20V ID= --1.5A RL=13Ω D VOUT ECH8673 P.G 50Ω S Ordering Information Device ECH8673-TL-H Package ECH8 Shipping 3,000pcs./reel memo Pb Free and Halogen Free Drain Current, ID -- A 16.0V 10.0V 6.0V 4.5V 3.5 ID -- VDS [Nch] 4.0V 3.0 2.5 2.0 3.5V 1.5 1.0 0.5 VGS=3.0V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Drain RtoDSoSu(rocenV)ol-t-ageV, GVDSS -- V IT16156 [Nch] 250 Ta=25°C 200 ID=1A 2A 150 100 50 0 0 2 4 6 8 10 12 14 16 Gate to Source Voltage, VGS -- V IT16158 Static Drain to Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A 7.0 6.5 VDS=10V ID -- VGS 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 Ta=75°C 25°C --25°C 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate to Source Voltage, RDS(on) -- VTaGS -- V 250 [Nch] 4.5 5.0 IT16157 [Nch] 200 150 100 VVGGVS=SG4=S.40=.V51V,0I,.0DIVD=,=1IA1DA=2A 50 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16159 No. A1892-3/8 Static Drain to Source On-State Resistance, RDS(on) -- mΩ ECH8673 Forward Transfer Admittance, | yfs | -- S Switching.


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