SiSA12DN

New Product N-Channel 30 V (D-S) MOSFET SiSA12DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) 0.0043 at VGS = 10 V 30 0.0060 at VGS = 4.5 V ID (A)a, g 25 25 Qg (Typ.) 13.6 nC PowerPAK® 1212-8 3.3 mm D 8D 7 D 6 D 5 S 1S 3.3 mm 2 S 3 G 4 Bottom View Ordering Information: SiSA12DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen IV Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supplies Personal Computers and Servers Telecom Bricks VRM’s and POL D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L =0.1 mH IAS EAS Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Limit 30 + 20, - 16 25g 25g 22b, c 18b, c 80 23g 2.9b, c 15 11 28 18 3.5b, c 2.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain...