SiHD5N50D

www.vishay.com SiHD5N50D Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 1.5 20 3 5 Single DPAK (TO-252) D D G GS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and Halogen-free FEATURES Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) Available Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Consumer electronics - Displays (LCD or plasma TV) Server and telecom power supplies - SMPS Industrial - Welding - Induction heating - Motor drives Battery chargers DPAK (TO-252) SiHD5N50D-E3 SiHD5N50D-GE3 SiHD5N50DT1-GE3 SiHD5N50DT4-GE3 SiHD5N50DT5-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dt ...